WEE Technology Company Limited

Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

According to reports, US researchers have developed a new type of GaN based electronic device called resonant tunneling diode, which has been applied to 5G technology with a peak speed higher than expected.

"The frequency and output power of GaN based resonant tunneling diodes are higher than that of traditional materials, and the key to their speed is the use of Gan materials," the researchers said.

The GaN based "resonant tunneling diode" breaks the record of current output and switching rate of traditional devices, and enables applications (including communication, networking and remote sensing) to obtain electromagnetic waves and terahertz frequencies in the millimeter wave range.

As the third generation semiconductor material, gallium nitride (GAN) is a kind of hard material with high melting point (melting point is about 1700 ℃), which has the characteristics of high frequency, high efficiency, high pressure resistance and so on. It is used to make a variety of power devices and chips.

Gallium nitride has been studied in the field of semiconductor materials for many years. Recently, it is widely known because it can be used in chargers. The charging market is not the only place where Gan power devices can be used, but also in the fields of Optoelectronics and RF.

It is worth mentioning that, in the RF field, gallium nitride RF devices are suitable for high-frequency and high-power scenarios, and are excellent products in the 5G era. They will replace Si based chips and be used in 5G base stations, satellite communications, military radars and other scenarios.

In the Political Bureau meeting, the construction of 5G base station ushered in the peak, the corresponding number and quality of various RF devices and chips are improving, and the market demand is strong. Gallium nitride technology is gradually occupying the market, which is unstoppable.

According to the prediction of topu Industry Research Institute, by 2023, the base station Gan RF device scale will reach the peak, reaching 11.26 billion yuan. Combined with the market of satellite communication and military radar, it is predicted that the Gan RF market will grow from 645 million dollars in 2018 to about 2 billion dollars in 2024.

In addition, GaN based UV laser has important application value in UV curing, UV sterilization and other fields. At present, both China and the United States have used GaN based UV disinfection and sterilization, and the relevant market has grown.