WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

GPP chip series rectifier bridge product features:

1. The common cathode mode of 4 chips is adopted to make the structure more concise and clear;

2. The lower solder paste is printed to ensure the consistency of solder paste quantity,

At the same time, it also solves the phenomenon of chip edge and corner weld caused by dispensing;

3. The fast bare metal welding method not only improves the welding efficiency, but also reduces the power loss.

4. The first three, the second and the fifth tests are used to ensure the comprehensive test of parameters. At the same time, the data acquisition system saves all the tested parameters for easy query and analysis;

GPP chip thin bridge rectifier device, its transmission current is mainly divided into 1A, 2A, 3A, 4A, 6A, 8A, 10A, 15A, 20A, 25A, 35A,50A;
The reverse breakdown voltage varies from 50V, 100V, 200V, 400V, 600V, 800V and 1000V according to chip specifications.

GBJ10-50A：GBJ1010、GBJ1510、GBJ2510、GBJ3510，GBJ5010

It is widely used in 3C mobile phone charger, router, adapter, large and medium-sized computers, microcomputer peripherals, program-controlled exchange, broadcast communication, instruments and meters, and rectification circuit in industrial control;

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

GBU1010, electrical parameters of 10A 1000V, GBU-4 plug-in four legs, using Taiwan imported wave crest GPP chip production, its black glue material is imported epoxy plastic resin material, strong encapsulation stability, the pin is imported 99.99% oxygen free copper, bending resistance, oxidation resistance, high conductivity.

At present, WEET rectifier bridges are found on power boards all over the country. The ultra-thin flat bridge rectifier bridge like GBU1010 works under the current voltage of 10A 1000V, and the leakage is only 5 μ a. Don't underestimate this figure, which will become the magic weapon of high-end power board with environmental protection and low energy consumption requirements! Power adapter with rectifier bridge, environmental protection and low energy consumption rectifier bridge of course is weet.

What is the difference between GBU1010 and GBJ1010?

The results show that the electrical parameters of GBU1010 and GBJ1010 are 10A 1000V; the peak forward surge current of GBU1010 is 220A, and that of GBJ1010 is 240A; 
the operating temperature can also be applied to - 50 ° ~ 125 °. Secondly, The package size of rectifier bridge GBU1010 is different from that of GBJ1010.

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

GBU610 main application fields: switching power supply, power adapter, industrial switching power supply, photovoltaic solar power generation system, such as photovoltaic power station, solar street lamp and other products

GBU610 also can be used in Small power switching power supply, power adapter, electric fan, TV, indoor air conditioner, household appliances and other related electrical products.

Other voltages: GBU608,GBU606,GBU604,GBU602,GBU601,GBU6005

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

KBPC5010: 50A 1000V Zinc Case Plug terminal Bridge Rectifiers

BR5010: 50A 1000V Zinc bottom plastic case Plug terminal Bridge Rectifiers

GBPC3510: 35A 1000V Zinc bottom plastic case Plug terminal Bridge Rectifiers

BR3510: 35A 1000V Zinc bottom plastic case Plug terminal Bridge Rectifiers

GBU1010: 10A 1000V plastic case lead terminal flat GPP Bridge Rectifiers
GBU610: 6A 1000V plastic case lead terminal flat GPP Bridge Rectifiers

GBJ1010: 10A 1000V plastic case lead terminal flat GPP big size Bridge Rectifiers

GBJ5010 50A 1000V plastic case lead terminal flat GPP big size Bridge Rectifiers

WEET Power Supply Applications Reference:

► 18W Charger

► 24W Charger, Adapter

► PC Power

► Server Power

WEET Home Appliance Applications Reference:

► TV Backlight Panel Flyback（Buck）

► TV Backlight Panel-PFC+LLC（Buck）

► Indoor Air conditioner

► Outdoor Air conditioner

WEET LED Lighting Applications Reference:

► Lighting 3-10W Typical Function Block(Isolated)

► Typical Function Block Non-isolated (Buck)

► Typical Function Block Non-isolated (Buck-Boost ; Output Voltage Between 100VDC And 200VDC)

► LED Driver Solution

WEE Technology Company Limited

Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

WEET GBU610 Cross Reference to Good-Ark Semiconductor：

Forward Current - 6.0 Amperes

WEET GBU1010 Cross Reference to Hy Electronic:

Forward Current - 10.0 Amperes

WEET GBJ1010 Cross Reference to YANGJIE TECHNOLOGY ：

Forward Current - 10.0 Amperes

WEET GBJ5010  Cross Reference to Kingtronics：

Forward Current - 50.0 Amperes

Maximum Repetitive Peak Reverse Voltage VRRM 1000V

Maximum RMS Voltage VRMS 700V

Maximum DC Blocking Voltage VDC 1000V

You can find more products on our website at : www.weetcl.com, www.wdiode.com

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

Good news to all of our valuable cusotmer, after a time of efforts， WEET has totally resume wrok from epidemic situation. 

Although, the price rise of raw material copper has influence on the manufacturing cost. WEET is still trying to support customer at my best.

This week, we prepared below glass passivated chip bridge rectifiers samples, free for testing.

GBU610 GBU1010 GBJ1010 GBJ5010 GBPC3510 KBPC5010 BR3510 BR5010 Samples Are Ready

WEET is capable of producing below different pakcage bridge rectifiers:

Round bridge WOB, 2WOB series;

Flat bridge KBP, KBL, KBU, KBJ, GBU, GBJ, RBV, PBU, PBL series;

Square bridge KBPC, BR, SB, MP, BP series; MB, MBS, HD, DB, DF bench bridge, patch bridge; GBPC silicon bridge, etc,

WEE Technology Company Limited 
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

Single phase bridge rectifier circuit is a bridge rectifier device, also known as rectifier bridge stack. It is the most commonly used circuit for rectifying by using the unidirectional conductivity of diodes. It is commonly used to convert alternating current into direct current.

Half wave rectifier uses the unidirectional conduction characteristics of diode. When the input is standard sine wave, the positive half of the output sine wave is obtained, and the negative half part is lost.

The bridge rectifier uses four diodes, which are connected in pairs. The positive half of the input sine wave is two tubes conducting, and the positive output is obtained; when the negative half part of the input sine wave is input, the other two tubes are on. Because these two tubes are connected in reverse, the output is still the positive half of the sine wave.

The utilization efficiency of bridge rectifier to input sine wave is twice as high as that of half wave rectifier. Bridge rectifier is the first step of converting alternating current into direct current.

The bridge rectifier is composed of several rectifier diodes connected by bridge and packaged with insulating plastic. The high-power bridge rectifier adds metal shell to the insulation layer to enhance heat dissipation.

The bridge rectifier has many varieties, excellent performance, high rectification efficiency and good stability. The maximum rectifier current is from 0.5A to 50a, and the maximum reverse peak voltage is from 50V to 1000V.

WEET  Hot 1000V Bridge Rectifiers: GBU410, GBU610, GBU810, GBU1010, GBJ1010, GBJ2510, GBJ5010, GBPC3510, GBPC5010, KBPC3510, KBPC5010, BR3510, BR5010

Applied to small current field products: low power switching power supply, power adapter, LED lamp rectifier, electric fan, TV, indoor air conditioner, household appliances and other related electrical products.

WEE Technology Company Limited

Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

A-405: MUR140 THRU MUR160 (MUR140, MUR160) Ultra-Fast Recovery Rectifiers

R-1: 1F1 THRU 1F7 (1F1, 1F2, 1F3, 1F4, 1F5, 1F6, 1F7）Fast Recovery Rectifier

R-6: HER601 THRU HER608 (HER601, HER602, HER603, HER604, HER605, HER606, HER607, HER608) High Efficient Rectifier

DO-41: 1N4933 THRU 1N4937 (1N4933, 1N4934, 1N4935, 1N4936, 1N4937）Fast Recovery Rectifier

DO-15: SF21G THRU SF28G (SF21G, SF22G, SF23G, SF24G, SF25G, SF26G, SF28G) Ultra-Fast Recovery Rectifiers

DO-27: ER301 THRU ER308 (ER301, ER302, ER303, ER304, ER306, ER308) Ultra-Fast Recovery Rectifiers

DO-34, DO-35: 1N4148 Silicon Epitaxial Planar Switching Diode

DO-41: BZX85C2V7 THRU BZX85C75 (BZX85C2V4, BZX85C2V7, BZX85C15,BZX85C27…BZX85C75) Silicon Epitaxial Planar Zener Diodes

WEE Technology Company Limited

Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

SMA <--->2010

SMB <--->2114

SMC <--->3220

SOD123  <--->1206

SOD323 <--->0805

SOD523 <--->0603 

DO-214AA<--->SMA

DO-214AB<--->SMB

DO-214AC<--->SMC

DO-213AB<--->MELF 

SMAF M1 THRU M7 (M1, M2, M3, M4, M5, M6, M7) General Purpose Plastic Rectifier

SMA(DO-214AC) S2A THRU S2M ( S2A, S2B, S2D, S2G, S2J, S2K, S2M) General Purpose Plastic Rectifier

SMB(DO-214AA) S3A THRU S3M (S3A, S3B, S3D, S3G, S3J, S3K, S3M) General Purpose Plastic Rectifier

SMC(DO-214AB) S5A THRU S5M (S5A, S5B, S5D, S5G, S5J, S5K, S5M) General Purpose Plastic Rectifier

https://www.weetcl.com/General_Purpose_Rectifiers/

WEE Technology Company Limited 
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

WEET as the leading diodes and rectifiers factory in China, we bulit our own chip production line. 

On one hand, WEET can control the most important quality part of the diodes, on the other hand, we can do the most practical budgets and do cost down plan for our valuable customers.

We are proud that the chip workshop have been running stably and successfully for more than 8 years, which is rare in China and among other competitors.

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

How to understand the code of Zener Diode, usually you can easily follow the part number or read the marking on the Zener Diode body, such as below:

5.1=5.1 Volt zener diode

5V1=5.1 Volt zener diode

12= 12 Volt zener diode

12V= 12 Volt zener diode

BZX85C22=22 Volt 1 watt zener diode

BZV55C4V7=4.7 Volt 500m watt zener diode

But sometimes you have to read the datasheet and find our the exact meaning of the Zener Diode voltage and power dissipation, for instance 1N4727A-1N4761A series 

1N4739A = 9.1 Volt zener diode

1N4754A = 39 Volt zener diode

When you have any problem in choosing a right Zener Diodes, you have to check with the manufacturer's code book. Below is the strong  WEET Zener Diodes list. We are ready to serve you .

Silicon Planar Zener Diodes BZX84C

Silicon Planar Power Zener Diodes BZX85C

Silicon Planar Power Zener Diodes 1N4727A-1N4761A

Silicon Epitaxial Planar Zener Diodes ZMM1-ZMM75

Silicon Planar Power Zener Diodes ZM4727-ZM4761

Zener Diodes 500m watt BZV55-SERIES

Zener Diodes 500m watt BZV55B-SERIES

Zener Diodes 500m watt BZX55C

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

Geographical segmentation of Electronic Components market:

Americas (United States, Canada, Mexico, Brazil), 

APAC (China, Japan, Korea, Southeast Asia, India, Australia),

Europe (Germany, France, UK, Italy, Russia, Spain),

Middle East & Africa (Egypt, South Africa, Israel, Turkey, GCC Countries)

Global Electronic Components market by Type: Active components, Passive components, Electromechanical

Global Electronic Components market by application: Automotive, Communications, Computing Applications, Industrial, Instrumentation, Lighting, Medical, Motor Control, Security

Global Electronic Components market by major vendor/manufacturers in the market:

Analog Devices, Inc., Omron, Texas Instruments, ABB, NXP Semiconductors, Murata, Kyocera, STMicroelectronics,  Samsung Electro-Mechanics, Infineon Technologies, Qorvo, Vishay, Molex, TDK Corporation, Nippon Mektron, Microchip, Taiyo Yuden Co., Ltd., WEE Technology, Skyworks, ON Semiconductor, TE Connectivity Ltd., Vectron, Panasonic Corporation, Eaton Corp., Littelfuse, KEMET, Microchip Technology, Yageo, Nippon Chemi-Con, Maxim Integrated, Amphenol

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

Mobile phones represent the largest worldwide market in terms of both volume and number of applications on a single platform. 

Currently about 1.5 billion smartphones are shipped per year worldwide. 

The major wireless functions in a typical mobile phone include a 2G/3G/4G (GSM/EDGE/CDMA/UMTS/WCDMA/LTE/LTEA/TD-SCDMA/TD-LTE) cellular modem, 

and wireless connectivity systems such as Wireless Local Area Network (WLAN), Bluetooth, Global Navigation Satellite System (GNSS), broadcasting receivers, and Near-Field Communication (NFC).

Motivated by increasing demand for mobile broadband services with higher data rates and better quality of service, the mobile phone industry has seen tremendous growth in recent years from 3G/3.5G High-Speed Packet Access (HSPA), Evolved High-Speed Packet Access (HSPA+) to 3.9G Long-Term Evolution (LTE), recently 4G Long-Term Evolution Advanced (LTE-A) and 5G.

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

WEE Technology is the earliest bridge rectifiers factory in China, which also specialized in diodes and related semiconductors. 

Tube packing for lower current and small size bridge rectifiers.

1.0 AMPS. MB1F THRU MB10F (MB1F, MB2F, MB3F, MB4F, MB6F, MB8F, MB10F) Glass Passivated Bridge Rectifiers

2.0 AMPS. DB201 THRU DB207(DB201, DB202, DB203, DB204, DB205, DB206, DB207) Glass Passivated Bridge Rectifiers

1.0 AMPS. MB1S THRU MB10S (MB1S, MB2S, MB3S, MB4S, MB6S, MB8S, MB10S) Glass Passivated Bridge Rectifiers

Box Bulk packing  for higher current and big size bridge rectifiers.

50.0 AMPS GBPC50005 THRU GBPC5010 (GBPC50005, GBPC5001, GBPC5002, GBPC5004, GBPC5006, GBPC5008, GBPC5010) Bridge Rectifiers

35.0 AMPS GBPC35005W THUR GBPC3510W (GBPC35005W, GBPC3501W, GBPC3502W, GBPC3504W, GBPC3506W, GBPC3508W, GBPC3510W) Bridge Rectifiers

15.0 AMPS GBPC15005 THRU GBPC1510 ( GBPC15005, GBPC1501, GBPC1502, GBPC1504, GBPC1506, GBPC1508, GBPC1510 ) Bridge Rectifiers

35.0 AMPS KBPC35005 THUR KBPC3510(KBPC35005W, KBPC3501W, KBPC3502W, KBPC3504W, KBPC3506W, KBPC3508W, KBPC3510W) Bridge Rectifiers

10.0 AMPS KBPC10005 THUR KBPC1010K ( KBPC10005, KBPC1001, KBPC1002, KBPC1004, KBPC1006, KBPC1008, KBPC1010 ) Bridge Rectifiers

https://www.weetcl.com/Single_Phase_Bridge_Rectifiers/

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

WEET Tape and Reel Packing for SMD Diodes 

SMAF M1 THRU M7 (M1, M2, M3, M4, M5, M6, M7) General Purpose Plastic Rectifier

https://www.weetcl.com/pdf/WEET_SMAF_M1_THRU_M7.pdf

WEET Bulk Box Packing for Axial Diodes 

R-6 6A05 THRU 6A10 (6A05, 6A1, 6A2, 6A4, 6A6, 6A8, 6A10) General Purpose Plastic Rectifier

https://www.weetcl.com/pdf/WEET_R6_6A05_THRU_6A10.pdf

WEET Ammo Box Packing for Axial Diodes 

DO-15 HER201 THRU HER208 (HER201, HER202, HER203, HER204, HER205, HER206, HER207, HER208) High Efficient Rectifier

https://www.weetcl.com/pdf/WEET_DO15_HER201_THRU_HER208.pdf

WEET Ammo Packing for Glass Axial Diodes 

https://www.weetcl.com/High_Speed_Switching_Diodes/DO35_1N4148.html

https://www.weetcl.com/pdf/WEET_DO35_1N4148.pdf

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

SIC Schottky diode SCS208AGC is used in 1KW 5G communication power supply PFC circuit to effectively improve the system efficiency

With the rapid increase of power consumption and quantity of 5g base station, the power supply problem is also the biggest problem. In 5G wireless side micro station power supply scheme, the direct power supply scheme is commonly used. The power is in the range of 1kW ~ 3KW. The circuit diagram frame of 5g micro station power supply scheme mainly includes single-phase rectification, PFC, LLC transformation and synchronous rectification.

The application of SIC Schottky diode SCS208AGC in 5G MicroStation 1KW power PFC circuit has the following advantages:

1. The reverse voltage VR is 650V, which can meet the application voltage requirement of rectifying output voltage between 300V and 400V, and reserve two times of margin, which can better deal with high reverse voltage;

2. The continuous forward current if is 8a, which can meet the power demand of 1kW; the total capacitance charge QC is 13nc. Small reverse recovery charge can switch at high speed, reduce switching loss and effectively improve the overall system efficiency of the power supply;

3. Because scs208agc can switch at high speed, the switching frequency of PFC switch tube Q2 / Q4 can be increased, so as to reduce the size and cost of magnetic materials L1 and L2, and reduce the cost for the overall power supply design;

4、 The temperature range of working junction and storage is -55~175 ℃, wide temperature range. It can be well adapted to the closed natural cooling conditions when the power box is installed as an outdoor holding pole or wall mounted installation environment.

5. The TO-220AC package has small package volume and is easy to be arranged in the compact power board position.

WEE Technology Company Limited

Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

According to reports, US researchers have developed a new type of GaN based electronic device called resonant tunneling diode, which has been applied to 5G technology with a peak speed higher than expected.

"The frequency and output power of GaN based resonant tunneling diodes are higher than that of traditional materials, and the key to their speed is the use of Gan materials," the researchers said.

The GaN based "resonant tunneling diode" breaks the record of current output and switching rate of traditional devices, and enables applications (including communication, networking and remote sensing) to obtain electromagnetic waves and terahertz frequencies in the millimeter wave range.

As the third generation semiconductor material, gallium nitride (GAN) is a kind of hard material with high melting point (melting point is about 1700 ℃), which has the characteristics of high frequency, high efficiency, high pressure resistance and so on. It is used to make a variety of power devices and chips.

Gallium nitride has been studied in the field of semiconductor materials for many years. Recently, it is widely known because it can be used in chargers. The charging market is not the only place where Gan power devices can be used, but also in the fields of Optoelectronics and RF.

It is worth mentioning that, in the RF field, gallium nitride RF devices are suitable for high-frequency and high-power scenarios, and are excellent products in the 5G era. They will replace Si based chips and be used in 5G base stations, satellite communications, military radars and other scenarios.

In the Political Bureau meeting, the construction of 5G base station ushered in the peak, the corresponding number and quality of various RF devices and chips are improving, and the market demand is strong. Gallium nitride technology is gradually occupying the market, which is unstoppable.

According to the prediction of topu Industry Research Institute, by 2023, the base station Gan RF device scale will reach the peak, reaching 11.26 billion yuan. Combined with the market of satellite communication and military radar, it is predicted that the Gan RF market will grow from 645 million dollars in 2018 to about 2 billion dollars in 2024.

In addition, GaN based UV laser has important application value in UV curing, UV sterilization and other fields. At present, both China and the United States have used GaN based UV disinfection and sterilization, and the relevant market has grown.

WEE Technology Company Limited

Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

Rectifiers / Transient Voltage Suppressors

Transient Voltage Suppressors

Schottky Rectifiers

• Rectifiers for high di/dt snubbers in compact packages

• 200 W to 600 W TVS for snubbers; low clamping ratios

P2SMA220A, P4SMA180A, P4SMA220A, P6SMB180A, P6SMB200A

• 1500 W to 5000 W TVS with high power density for lightning protection 

SMCJ75CA

• 1500 W / 3000 W TVS with high power density for DC/DC protection

SMCJ24CA, SMCJ33CA, SMCJ36A

• Schottky rectifiers in compact packages for auxiliary service and synchronous parallel rectification

• Packages: SMF(DO-219AB)，MicroSMP(DO-219AD)，SlimSMA(DO-221AC)，SlimSMAW(DO-221AD)，SMPA(DO-221BC)，SMC(DO-214AB)，SMA(DO-214AC)，SMB(DO-214AA)

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

System Architecture (diagram)

High Current Density Bridge Rectifiers

Didoes and Rectifiers

Schottky Rectifiers

Low Voltage Rectifiers

Small Signal Switching Diodes

Small Signal Schottky Diodes

Small Signal Zener Diodes

High current density bridge rectifiers in compact packages

• Low VF and high forward surge current capability

• Improves system power efficiency

Rectifiers in compact packages for auxiliary functions (snubber, clamp, bootstrap, rectifier, etc.)

• Increased power density for space savings

• Improved recovery for better EMC

Schottky rectifiers in compact packages for sub-power in line cards

• Increased power density for space savings

Low voltage rectifiers for bridgeless and multiphase bridgeless topologies

• Increased power density for space savings, improved efficiency

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

2019 is a year of rapid changes, the economy is under downward pressure, and trade war conflicts have intensified, and many industries have entered a recession cycle. However, semiconductor industry 2019 is a year of rapid changes. The recession cycle has entered, but the semiconductor industry continues to move forward on the opportunity of domestic substitution and industrial renewal. For compound semiconductors, whether it is gallium nitride for radio frequency or silicon carbide for power electronics, there has been considerable development.

The 5G communication business is entering a period of rapid expansion, and the corresponding GaN chips and power chips continue to grow. Gallium nitride technology has basically determined its technical route and application in the field of radio frequency, that is, growing gallium nitride epitaxy on silicon carbide high-purity insulating substrates, and making chips on it for communication applications such as high-frequency power amplifiers.

With the development of 5G communications and the Internet of Things, the demand in this field will be increasing. It is worth noting that the application of GaN technology in power supplies. The cost and performance of gallium nitride power devices grown on silicon substrates have been much better than similar silicon devices. Although its long-term reliability still needs to be verified, for consumer-grade applications such as mobile phone fast charging, GaN is expected to be fully introduced and applied.

Silicon carbide is a very promising material, especially in power devices and power applications. It is currently receiving great attention. With the delivery of the first batch of domestic Tesla electric vehicles by the end of 2019, silicon carbide power devices related fields have been fully replaced. The trend of silicon-based IGBTs is becoming more and more obvious. Especially the high efficiency, low weight, small volume, and ease of use in heat dissipation and parallel connection brought by silicon carbide are crucial to the overall design of new energy vehicles.

The rapid development of industries such as automotive electronics, 5G technology, new energy vehicles, and rail transportation has increased the demand for high-temperature, high-power, high-voltage, and high-frequency devices in electronic technology, so the third generation of semiconductors came into being. The third generation semiconductors mainly include silicon carbide (SiC), aluminum nitride (AlN), gallium nitride (GaN), diamond, and zinc oxide (ZnO). Among them, the more mature ones are SiC and GaN.